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Area Semiconductor devices and integrated circuits / General terms for semiconductor devices

IEV ref521-05-11

en
thermal breakdown (of a PN junction)
breakdown caused by generation of free charge carriers owing to the cumulative interaction between increasing power dissipation and increasing junction temperature

Note – The English term "thermal runaway" is also used in some countries.


fr
claquage par effet thermique (d’une jonction PN), m
claquage provoqué par la génération de porteurs de charge libres, due aux effets cumulatifs de l’interaction de l’augmentation de la dissipation de puissance et de l’augmentation de la température de la jonction

ar
انهيارحرارى (لوصلةPN)

de
thermischer Durchbruch, <eines PN-Übergangs> m

es
perforación por efecto térmico (de una unión PN)

fi
lämpöläpilyönti

it
rottura termica

ko
열 항복, <PN접합>
열 파괴, <PN접합>

ja
熱破壊, <PN接合の>

pl
przebicie cieplne (złącza PN)

pt
perfuração por efeito térmico (de uma junção PN)

sr
термални пробој, <PN споја> м јд

sv
termiskt genombrott

zh
热击穿, <PN结的>

Publication date: 2002-05
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