Queries, comments, suggestions? Please contact us.



Area Semiconductor devices and integrated circuits / General terms for semiconductor devices

IEV ref521-05-14

en
virtual temperature
internal equivalent temperature (of a semiconductor device)
theoretical temperature which is based on a simplified representation of the thermal and electrical behaviour of the semiconductor device

Note 1 – The virtual temperature is not necessarily the highest temperature in the device.

Note 2 – Based on the power dissipation and the thermal resistance or impedance that corresponds to the mode of operation, the virtual junction temperature can be calculated from the formula:

T j = T case + P R th MathType@MTEF@5@5@+=feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLnhiov2DGi1BTfMBaeXatLxBI9gBaerbbjxAHXgarqqtubsr4rNCHbGeaGqipG0dh9qqWrVepG0dbbL8F4rqqrVepeea0xe9LqFf0xc9q8qqaqFn0lXdHiVcFbIOFHK8Feea0dXdar=Jb9hs0dXdHuk9fr=xfr=xfrpeWZqaaeqabiGaciGacaqadmaadaqaaqaaaOqaaiaadsfadaWgaaWcbaGaamOAaaqabaGccqGH9aqpcaWGubWaaSbaaSqaaiaadkgacaWGVbGaamyAaiaadshacaWGPbGaamyzaiaadkhaaeqaaOGaey4kaSYaaSaaaeaacaWGqbaabaGaamOuamaaBaaaleaacaWG0bGaamiAaaqabaaaaaaa@44A1@ or T j = T amb + P R th MathType@MTEF@5@5@+=feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLnhiov2DGi1BTfMBaeXatLxBI9gBaerbbjxAHXgarqqtubsr4rNCHbGeaGqipG0dh9qqWrVepG0dbbL8F4rqqrVepeea0xe9LqFf0xc9q8qqaqFn0lXdHiVcFbIOFHK8Feea0dXdar=Jb9hs0dXdHuk9fr=xfr=xfrpeWZqaaeqabiGaciGacaqadmaadaqaaqaaaOqaaiaadsfadaWgaaWcbaGaamOAaaqabaGccqGH9aqpcaWGubWaaSbaaSqaaiaadggacaWGTbGaamOyaaqabaGccqGHRaWkdaWcaaqaaiaadcfaaeaacaWGsbWaaSbaaSqaaiaadshacaWGObaabeaaaaaaaa@40CF@


fr
température virtuelle (d’un dispositif à semiconducteurs), f
température équivalente interne (d’un dispositif à semiconducteurs), f
température théorique basée sur une représentation simplifiée du comportement thermique et électrique d’un dispositif à semiconducteurs

Note 1 – La température virtuelle n’est pas nécessairement la température la plus élevée du dispositif.

Note 2 – Basée sur la puissance dissipée et sur la résistance ou impédance thermique qui correspond à ce mode de fonctionnement, la température virtuelle peut être calculée à l’aide de la relation:

T j = T boitier + P R th MathType@MTEF@5@5@+=feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLnhiov2DGi1BTfMBaeXatLxBI9gBaerbbjxAHXgarqqtubsr4rNCHbGeaGqipG0dh9qqWrVepG0dbbL8F4rqqrVepeea0xe9LqFf0xc9q8qqaqFn0lXdHiVcFbIOFHK8Feea0dXdar=Jb9hs0dXdHuk9fr=xfr=xfrpeWZqaaeqabiGaciGacaqadmaadaqaaqaaaOqaaiaadsfadaWgaaWcbaGaamOAaaqabaGccqGH9aqpcaWGubWaaSbaaSqaaiaadkgacaWGVbGaamyAaiaadshacaWGPbGaamyzaiaadkhaaeqaaOGaey4kaSYaaSaaaeaacaWGqbaabaGaamOuamaaBaaaleaacaWG0bGaamiAaaqabaaaaaaa@44A1@ ou T j = T amb + P R th MathType@MTEF@5@5@+=feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLnhiov2DGi1BTfMBaeXatLxBI9gBaerbbjxAHXgarqqtubsr4rNCHbGeaGqipG0dh9qqWrVepG0dbbL8F4rqqrVepeea0xe9LqFf0xc9q8qqaqFn0lXdHiVcFbIOFHK8Feea0dXdar=Jb9hs0dXdHuk9fr=xfr=xfrpeWZqaaeqabiGaciGacaqadmaadaqaaqaaaOqaaiaadsfadaWgaaWcbaGaamOAaaqabaGccqGH9aqpcaWGubWaaSbaaSqaaiaadggacaWGTbGaamOyaaqabaGccqGHRaWkdaWcaaqaaiaadcfaaeaacaWGsbWaaSbaaSqaaiaadshacaWGObaabeaaaaaaaa@40CF@


ar
درجة حرارة افتراضية (لجهازشبة موصل)

de
Ersatztemperatur, <eines Halbleiterbauelements> f

es
temperatura equivalente interna (de un dispositivo semiconductor)
temperatura virtual (de un dispositivo semiconductor)

fi
näennäislämpötila

it
temperatura virtuale
temperatura interna equivalente

ko
가온도

ja
仮想温度
内部等価温度, <半導体デバイスの>

pl
temperatura pozorna (przyrządu półprzewodnikowego)

pt
temperatura virtual (de um dispositivo semicondutor)
temperatura equivalente interna (de um dispositivo semicondutor)

sr
виртуелна температура, <полупроводничког уређаја> ж јд
унутрашња еквивалентна температура, <полупроводничког уређаја> ж јд

sv
virtuell temperatur

zh
有效温度
内部等效温度, <半导体器件的>

Publication date: 2002-05
Copyright © IEC 2020. All Rights Reserved.