International
Electrotechnical
Commission
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Area
Semiconductor devices and integrated circuits
/ Types of semiconductor devices
IEV ref
521-04-55
en
metal-oxide-semiconductor field-effect transistor
MOSFET (abbreviation)
insulated-gate field-effect transistor in which the insulating layer between each gate electrode and the channel is oxide material
fr
transistor à effet de champ métal-oxyde-semiconducteurs
, m
transistor à effet de champ à grille isolée dans lequel la couche isolante entre chaque électrode de grille et le canal est un oxyde
ar
ترانزستور(محكوم بالمجال الكهربائي) بشبه موصلات معادن مؤكسدة
de
Feldeffekttransistor mit Metalloxid-Halbleiter, m
MOSFET, Abkürzung
es
transistor de efecto de campo de metal-óxido semiconductor
fi
MOS-transistori
it
transistor a effetto di campo metallo-ossido-semiconduttore (MOSFET)
ko
금속 산화막 반도체 전계 효과 트랜지스터
ja
金属-酸化物-半導体電界効果トランジスタ
MOSFET, (略語)
pl
tranzystor polowy tlenkowy
tranzystor polowy MOS
tranzystor MOS
pt
transistor de efeito de campo (metal-óxido-semicondutor)
sr
метал-оксид полупроводни транзистор са ефектом поља, м јд
MOSFET
sv
fälteffekttransistor med oxidisolerat styre
MOS-transistor
zh
金属氧化物半导体场效应晶体管
MOSFET
Publication date:
2002-05
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