International
Electrotechnical
Commission
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Area
Semiconductor devices and integrated circuits
/ General terms for semiconductor devices
IEV ref
521-05-12
en
punch-through
(between two PN junctions)
contact between the space charge regions of two PN junctions as a result of widening of one or both of them
fr
pénétration
(entre deux jonctions PN), f
contact entre les régions de charge d’espace de deux jonctions PN par suite de l’extension de l’une d’elles ou des deux
ar
ثقب العبور (بين وصلتينPN)
de
Durchgriff, <zwischen zwei PN-Übergängen> m
es
penetración (entre dos uniones PN)
fi
leviämisläpilyönti
it
punch-through
penetrazione (tra due giunzioni PN)
ko
침식 현상, <2 PN접합>
천공 스루, <2 PN접합>
ja
パンチスルー, <2つのPN接合間の>
pl
zwarcie skrośne (między dwoma złączami PN)
pt
penetração (entre duas junções PN)
sr
уштинуће, <између два PN споја> с јд
sv
penetration
zh
穿通, <两个PN结间的>
Publication date:
2002-05
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