International
Electrotechnical
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Area
Semiconductor devices and integrated circuits
/ Specific terms for transistors
IEV ref
521-07-06
en
channel
(of a field-effect transistor)
thin semiconductor layer between the source region and the drain region, in which the current flow is controlled by the gate potential
fr
canal
(d’un transistor à effet de champ), m
mince couche de semiconducteur entre la région de source et celle de drain, et dans laquelle circule un courant commandé par la différence de potentiel entre la grille et la source
ar
قناة (لترانزستورمحكوم بالمجال الكهربائي)
de
Kanal, <eines Feldeffekttransistors> m
es
canal (de un transistor de efecto de campo)
fi
kanava
it
canale
ko
채널, <전계 효과 트랜지스터>
경로, <전계 효과 트랜지스터>
ja
チャネル, <電界効果トランジスタの>
pl
kanał (tranzystora polowego)
pt
canal (de um transistor de efeito de campo)
sr
канал, <транзистора са ефектом поља> м јд
sv
kanal
zh
沟道, <场效应晶体管的>
Publication date:
2002-05
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